Part Number Hot Search : 
0100M ASC7512 2SA11 162003 153M000 1N4683D7 5224B NE68700
Product Description
Full Text Search
 

To Download BSH108 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  BSH108 n-channel enhancement mode ?eld-effect transistor c c 1. description n-channel enhancement mode ?eld-effect transistor in a plastic package using trenchmos? 1 technology. product availability: BSH108 in sot23. 2. features n trenchmos? technology n very fast switching n logic level compatible n subminiature surface mount package. 3. applications n battery management n high speed switch n low power dc to dc converter. 4. pinning information table 1: pinning - sot23, simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot23 2 source (s) 3 drain (d) msb003 top view 12 3 s d g mbb076 n-channel enhancement mode ?eld-effect transistor n-channel enhancement mode ?eld-effect transistor product specification sales@twtysemi.com http://www.twtysemi.com 1 of 2
BSH108 n-channel enhancement mode ?eld-effect transistor 5. quick reference data 6. limiting values table 2: quick reference data symbol parameter conditions typ max unit v ds drain-source voltage (dc) t j =25to150 c - 30 v i d drain current (dc) t sp =25 c; v gs =5v - 1.9 a p tot total power dissipation t sp =25 c - 0.83 w t j junction temperature - 150 c r dson drain-source on-state resistance v gs = 10 v; i d = 1 a 77 120 m w v gs =5v; i d = 1 a 102 140 m w table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) t j =25to150 c - 30 v v dgr drain-gate voltage (dc) t j =25to150 c; r gs =20k w- 30 v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t sp =25 c; v gs =5v; figure 2 and 3 - 1.9 a t sp = 100 c; v gs =5v; figure 2 - 1.2 a i dm peak drain current t sp =25 c; pulsed; t p 10 m s; figure 3 - 7.5 a p tot total power dissipation t sp =25 c; figure 1 - 0.83 w t stg storage temperature - 65 +150 c t j operating junction temperature - 65 +150 c source-drain diode i s source (diode forward) current (dc) t sp =25 c - 0.83 a i sm peak source (diode forward) current t sp =25 c; pulsed; t p 10 m s - 3.3 a product specification sales@twtysemi.com http://www.twtysemi.com 2 of 2


▲Up To Search▲   

 
Price & Availability of BSH108

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X